填充因子对K-V分布束晕-混沌控制效果的影响  

Impact of Filling Factor on Beam Halo-chaos Control Effects in K-V Distribution

作　　者：成丽春[1] 翁甲强[1] 方锦清[2] 朱伦武[3] 罗晓曙[1] 

机构地区：[1]广西师范大学物理与信息工程学院,广西桂林541004 [2]中国原子能科学研究院,北京102413 [3]浙江科技学院基础部,浙江杭州310012

出　　处：《原子能科学技术》2005年第1期18-23,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助重点基金资助项目(70431002);国家自然科学基金资助项目(70371068;10247005)

摘　　要：系统地研究了周期磁聚焦束流传输网络中填充因子对强流离子加速器K-V分布束晕-混沌控制效果的影响.通过数值模拟,确定了束晕-混沌控制效果较好的填充因子的取值范围为0.75～0.99,从而把以往填充因子只凭经验取个别值的研究扩大到可在一个较大的范围取值.另外,还发现了填充因子取值为0.59～0.67时束截面上离子数密度分布由均匀分布变为沿径向出现一峰状分布现象,从而为离子束应用提供了新的参考.The effect of the filling factor on beam halo-chaos control for K-V distribution was studied. By numerical simulation, it is found that when the filling factor takes range value from 0.75 to 0.99, the control effect is well. Thus, the range of filling factor values is extended obviously. In addition, it is discovered that the ion density distribution along the radius and the beam section has a peak, although it is uniform initially. The study provides a new guidance for ion beam's application.

关 键 词：填充因子 强流加速器 K-V分布 束晕-混沌控制器 束流传输网络 核反应堆 

分 类 号：TL362[核科学技术—核技术及应用]