一种具有极性记忆效应的热可擦有机电双稳薄膜  

A New Thermally Erasable Organic Bistable Film with Polarized Memory Effect

作　　者：刘春明[1] 吕银祥[1] 郭鹏[1] 农昊[1] 蔡永挚[1] 徐伟[1] 潘星龙[1] 华中一[1] 周峥嵘[2] 陶凤岗[2] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学化学系,上海200433

出　　处：《真空电子技术》2003年第6期11-14,共4页Vacuum Electronics

基　　金：国家自然科学基金项目(No.60171008);上海科委纳米专项基金项目(No.0214nm005)

摘　　要：报道了一种新型有机材料AOSCN(3,9-双(10-(二氰基亚甲基)-9-亚甲蒽基)-2,4,8,10-四硫杂螺[5,5]十一烷),能与Cu形成具有电双稳特性的络合物,在6 V电压下,薄膜发生从高阻态到低阻态的转变,跃迁时间小于30 ns,驰豫时间小于1 us。若薄膜已发生高阻态到低阻态转变,高温热处理能使其恢复初始状态,这有望制成可擦写存储器。此外,在一定的工艺条件下,AOSCN与Cu和Al形成的金属-有机-金属(MOM)结,具有极性记忆效应。A metal-orgainc complex thin film, constructed by Cu and a new organic material AOSCN (3,9-di (anthracene-10-(dicyanomethylene)-9-) -2,4,8,10-tetrathiaspiro[5,5]undecane) was reported. The complex shows good electrical bistability. The device with a sandwich structure can be transferred from high to low-impedance under 6 V with delay and switching times of less than 1000 and 30 ns, respectively. The anneal can erase the low state. Further investigation found that the junction of Cu/AOSCN/Al exhibits polarized memory effect in certain condition.

关 键 词：有机络合物 电双稳态 极性记忆效应 热可擦 

分 类 号：O484.4[理学—固体物理]