MgO－SnO_2薄膜乙醇气敏元件的研制  

STUDY OF DOPED SnO_2 THIN-FILM GAS SENSORS

作　　者：王晓俊[1] 邹道文[1] 傅敏恭[1] 

机构地区：[1]南昌大学高新技术研究所,江西师范大学

出　　处：《南昌大学学报（理科版）》1994年第4期406-409,共4页Journal of Nanchang University(Natural Science)

基　　金：江西省自然科学基金

摘　　要：采用真空镀锡膜、锡膜氧化，浸泡掺杂的方法研制了掺ＭｇＯ的ＳｎＯ＿２薄膜气敏元件，在对乙醇、丙酮等八种气体的测试结果表明：ＭｇＯ－ＳｎＯ＿２元件提高了对乙醇的灵敏度和选择性，而对其余气体的气敏特性同未掺杂元件相类似。实验发现，随着浸泡液浓度的增大，元件对乙醇的灵敏度并不是单调地随之增大，而是出现了一个峰值。实验还发现经Ｍｇ（ＮＯ＿３）＿２溶液处理过的元件对乙醇的灵敏度与乙醇浓度之间的线性关系大大拓宽。在敏感机理方面，提出了流过元件电流Ｉ的公式，该公式可以较好地解释实验现象。利用化学方法在ＳｎＯ＿２薄膜中掺入ＭｇＯ，所制备的元件既克服了烧结型元件的缺点，又克服了薄膜元件物理方法掺杂时掺杂量难以控制的不足之处，为开发新型薄膜气敏元件作了一种尝试。The SnO_2 thin-film gas sensor contaiming MgO_2 has been studied,after Snevaporated in vacuum,Sn film oxided.The MgO-SnO_2 gas sensor improves the sensitivityand selectivity to C_2H_5OH,and has low sensityvity and selectivity to C_6H_6,C_4H_(10_,LPG,NH_3coal gas,H_2.The amount of the doping materials can affect the sensitivity and selectivity toC_2H_5 than the undoped gas sensors,The formula of the electric current I which flows throughthe gas sensor is proposed.It can half quantitatively explain the experiment phenomina.Thiskind of gas sensors can not only orercome the shortcomings of the sintered type,but also theshortcoming of the physical doping method that the doped amount is difficult to control.

关 键 词：掺杂 薄膜 气敏元件 

分 类 号：O659.31[理学—分析化学]