单晶硅片的制造技术  

Manufacturing Technique of Monocrystal Silicon Wafers

作　　者：吴明明[1] 周兆忠[1] 巫少龙[1] 

机构地区：[1]浙江工业大学浙西分校先进制造实验室,浙江衢州324006

出　　处：《制造技术与机床》2005年第3期72-75,共4页Manufacturing Technology & Machine Tool

摘　　要：随着IC技术的进步 ,集成电路芯片不断向高集成化、高密度化及高性能化方向发展。传统的硅片制造技术主要适应小直径 (≤ 2 0 0mm)硅片的生产 ;随着大直径硅片的应用 ,硅片的超精密磨削得到广泛的应用。文章主要论述了小直径硅片的制造技术以及适应大直径硅片生产的硅片自旋转磨削法的加工原理和工艺特点。As IC's technique advances, integrated circuit chips are developing toward higher density, higher performance and higher integration. The conventional silicon wafers manufacturing technique chiefly suited to the production of smaller diameter ( ≤200 mm ) silicon wafers .With the application of larger diameter silicon wafer, high precision grinding is widely used for its manufacturing. This paper mainly discusses the manufacturing technique of smaller diameter silicon wafers, as well as the principle and characteristic of silicon wafermanufacturing based on the wafer rotation grinding method for larger diameter silicon wafer.

关 键 词：单晶硅片 IC技术 高密度化 集成电路芯片 制造技术 大直径 集成化 小直径 超精密磨削 加工原理 

分 类 号：TH16[机械工程—机械制造及自动化] TN305[电子电信—物理电子学]