Study on the Formation Mechanism of the Solid Siliconized Layer on Ti-48Al Alloy  

Study on the Formation Mechanism of the Solid Siliconized Layer on TJ-48A1 Alloy

作　　者：MAXiao-xia LIANGWei ZHAOXing-guo SHIJu-yan BIANLi-ping 

机构地区：[1]SchoolofMaterialsScienceandEngineering,TaiyuanUniversityofTechnology [2]Taiyuan030024,China

出　　处：《材料热处理学报》2004年第05B期681-683,共3页Transactions of Materials and Heat Treatment

基　　金：supported by the National Natural Science Foundation of China(No.50171046);the Natural Science Foundation of Shanxi Province,China(No.20021051)

摘　　要：The microstructures of the siliconized specimens of Ti-48Al alloy were analyzed by SEM equipped with XEDS. The specimens were pack siliconized with the two different cementations, 15%Si+85% A12O3 and 15%Si+85%ZrO2. The results show that a composite siliconized layer is formed on the surface of the TiAl alloy. The outer layer is the continuous A12O3 where a lot of Si particles adhered; the inner layer is most of Ti5Si3 with amount of ALjOs particles dispersed in. It was deduced that the A12O3 in the cementation layer is formed by the Al atoms in the TiAl substrate react with the residual O in the furnace and in the TiAl substrate.The microstructures of the siliconized specimens of Ti-48Al alloy were analyzed by SEM equipped with XEDS. The specimens were pack siliconized with the two different cementations, 15%Si+85% A12O3 and 15%Si+85%ZrO2. The results show that a composite siliconized layer is formed on the surface of the TiAl alloy. The outer layer is the continuous A12O3 where a lot of Si particles adhered; the inner layer is most of Ti5Si3 with amount of ALjOs particles dispersed in. It was deduced that the A12O3 in the cementation layer is formed by the Al atoms in the TiAl substrate react with the residual O in the furnace and in the TiAl substrate.

关 键 词：Ti-48Al合金 化学热处理 硅化 显微结构 

分 类 号：TG166.7[金属学及工艺—热处理]