SnS薄膜的制备及其特性研究  

Preparation and Characterization of SnS Thin Films

作　　者：郑春蕊[1] 雷天民[1] 胡永红[1] 李红生[1] 刘守智[2] 

机构地区：[1]西安理工大学电子工程系,西安710048 [2]西安理工大学材料工程系,西安710048

出　　处：《微纳电子技术》2005年第2期66-68,共3页Micronanoelectronic Technology

基　　金：陕西省教委自然科学基金资助项目(01JK196);(04JK246)

摘　　要：以硫代乙酰胺、三乙醇胺、氯化亚锡和氨水作反应物,氯化铵作缓冲剂,采用化学浴法在玻璃衬底上沉积SnS薄膜。用XRD,SEM等手段分别对薄膜样品的晶体结构及表面形貌进行了表征。XRD分析结果表明薄膜样品为具有斜方晶体结构的多晶SnS薄膜,SEM测量结果显示薄膜晶粒尺寸为数十纳米。此外,本文还简要分析了氯化铵在反应中的作用。SnS thin films were deposited on glass by the chemical bath deposition method using triethanolamine(TEA),thioacetamide,SnCl2·H2O,ammonia(aqeous)as reactant and using NH4Cl(aqeous)as buffer aqeous. XRD and SEM were employed to study the structure and surface of the film samples. XRD results imply that the prepared film is polycrystalline films with orthorhombic structure. SEM results indicate that the crystal size of thin films is about 10～50 nm. In addition,the influence of the NH4Cl on the chemical reaction was discussed briefly.

关 键 词：硫化锡 薄膜 化学浴 氯化铵 表征 

分 类 号：TQ03[化学工程] TN304[电子电信—物理电子学]