光电双向负阻晶体管的研制及特性分析  

Fabrication and Characteristic Analysis of Photo-bidirectional Negative Resistance Transistor

作　　者：郭维廉[1] 张世林[1] 刘娜[1] 李树荣[1] 沙亚男[1] 毛陆虹[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《半导体光电》2001年第4期266-270,274,共6页Semiconductor Optoelectronics

摘　　要：首次对双向负阻晶体管 (BNRT)进行了光敏化 ,设计并研制出既有光敏特性又有“S”型负阻特性的一种新型光电开关器件———光电双向负阻晶体管 (PBNRT)。介绍了器件的设计和研制过程 ;测量分析了其I V特性与光强和栅极电压的关系 ;By means of photo sensitization a photo bidirectional negative resistance transistor (PBNRT) have been designed and fabricated for the first time.This new optical switching device has both light sensitive and'S'type negative resistance characteristics.In this paper,the relationship between light intensity and gate voltage affecting I V characteristics is measured and analyzed,together with the optical and electrical switching time.

关 键 词：双向“S”型负阻器件 光电双向负阻晶体管 光电开关 

分 类 号：TN361[电子电信—物理电子学]