半导体激光器端面剩余模式反射率测量结果的分析  

Analysis of measurement results of residual reflectivity at AR coated facets of semiconductor lasers

作　　者：武岚[1] 罗斌[1] 陈建国[1] 卢玉村[1] 

机构地区：[1]四川大学光电科学系,成都610064

出　　处：《中国激光》1993年第5期349-353,共5页Chinese Journal of Lasers

基　　金：国家教委博士点基金;国家自然科学基金资助项目

摘　　要：本文分析了单色仪出射狭缝宽度对半导体激光器镀膜端面反射率测量的影响,理论预言了调制度和反射率的测量值以及测量谱中波峰和波谷的位置随缝宽周期性变化的规律。实验结果证实了理论预测的正确性。Westbrook's theory has been adopted to analyse.the effects of a grating monochramator on the measurement of modal reflectivity at AR coated facets of a semiconductor laser diode. It has been verified that the measured modulation index and reflectivity changes with the exit slit width periodically. The period has been identified to correspond to the diode mode spacing. The analysis has also predicted that when the passband width of the monochramator is somewhat larger than the diode mode spacing, the measured peaks and valleys will be different from their real positions by a half of the mode spacing.

关 键 词：半导体激光器 反射率 调制度测量 

分 类 号：TN248.4[电子电信—物理电子学]