硅紫外光敏管设计研究  

Designing Studies of UV Sensitive Silicon Photodiode

作　　者：胡东红[1] 

机构地区：[1]湖北大学,武汉430062

出　　处：《光电子技术》1993年第1期50-54,共5页Optoelectronic Technology

摘　　要：本文讨论了光吸收系数、掺杂浓度、掺杂浓度分布、表面反射等各种因素对硅光敏管紫外响应的影响。提出了制作硅紫外光敏管的设计原则:浅结、低掺杂、高表面浓度梯度和 SiO_2层满足消反射条件。并具体分析了一个实例。The influence of various factors on the UV responsivity of silicon photo- diode is discussed.The factors include the optical absorption coefficient,the effect of dop- ing on emitter self-making field and optical reflection of surface.A principle for making UV sensitive silicon photodiode is proposed:shallowly diffused junction,lowly doped im- purity concentration,high gradient of impurity concentration at the surface and the antire- flection condition of SiO_2 layer.

关 键 词：硅光敏管 光敏器件 光电器件 设计 

分 类 号：TN375[电子电信—物理电子学]