三元合金　（GaSb）_（1－x）Ge_（2x），（IuP）_（1－x）Ge_（2x）　的亚稳有序无序相变以及相变对于能隙的影响  

Metastable Order-Disorder Phase Transition of the Alloys (GaSb)_(1-x)Ge_(2x),(InP)_(1-x)Ge_(2x) and Effects on Energy Gaps

作　　者：倪军[1] 顾秉林[1] 朱嘉麟[1] 

机构地区：[1]清华大学现代应用物理系

出　　处：《Journal of Semiconductors》1994年第2期103-108,共6页半导体学报（英文版）

摘　　要：根据普适参数紧束缚方法得到的最近邻对原子相互作用能以及改进的Ｋｉｋｕｃｈｉ近似，我们计算了合金（Ｇａｓｈ）１－ｘＧｅ２ｘ，（ＩｎＰ）１－ｘＧｅ２ｘ的亚稳相图．在计算亚稳相图时，Ｇｅ原子取为无序分布以消除相分离．对于亚稳合金（Ｇａｓｈ）１－ｘＧｅ２ｘ，相应于亚稳有序无序相转变点的临界转变浓度ｘｃ为０．２６，对于亚稳合金（ＩｎＰ）１－ｘＧｅ２ｘ，ｘｃ为０．６１．计算值与实验值符合较好．根据关联虚晶格近似我们还计算了合金的能隙．Abstract The metastable phase diagrams of the alloys (GaSh)1-x Ge2x, (InP)1-xGe3x arecalculated based on the modified Kikuchi approximation with the interaction ener gies of the nearest-neighbor atom pairs computed by the universal parameter tight binding method. Ge atoms are taken to be randomly distributed in order to avoidsegregation in the computation of the metastable phase diagrams.There is a metas table order-disorder transition point at xc=￣0.26 for the alloy (GaSh)1-x.Ge2x and atxc=0'61 for(InP)1-x.Ge2x. The results are in good agreement with the experiments.Finally,band-gaps of the alloys are calculated.

关 键 词：化合物半导体 三元合金 相变 能隙 

分 类 号：TN304.26[电子电信—物理电子学]