p~-型多孔硅的拉曼光谱与结构特征  

Raman Spectra and Structure Characteristics ofp Porous Silicon

作　　者：王昕[1] 何国山[1] 张树霖[1] 刁鹏[1] 李经建[1] 蔡生民[1] 

机构地区：[1]北京大学物理系,北京大学化学系

出　　处：《Journal of Semiconductors》1994年第4期248-254,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文第一次在较宽的频率范围内研究了ｐ－型多孔硅的拉曼光谱，观察到并试探性的指认了多孔硅的一级ＴＡ、ＬＡ和二级ＬＡ、ＴＯ声子峰；从上述拉曼谱和多孔硅结构关系的初步分析中了解到，ｐ－型多孔硅在结构上是一种类似于纳米晶的硅材料．Abstract The Raman spectra of p-type porous silicon in a large range of frequencyhave been measured and several new peaks have been observed for the first time,which were assigned to the first order TA.LA and second order TA.TO phononmode.The relation between the above spectra and the structure characteristics ofp- porous silicon was preliminarily discussed.

关 键 词：多孔硅 散射谱 结构 P-型多孔硅 

分 类 号：TN304.12[电子电信—物理电子学]