InP系量子阱相位调制器的理论设计  

Theoretical Design of MQW Phase Modulators in InP System

作　　者：陈建新[1] 邬祥生[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《Journal of Semiconductors》1994年第4期243-247,共5页半导体学报（英文版）

基　　金：863计划资助

摘　　要：本文应用量子限制Ｓｔａｒｋ效应理论计算了ＩｎＰ系量子阱中激子的波函数及激子的能量．在此基础上，计算了不同电场条件下激子能量的红移，以及吸收系数的变化．然后，根据Ｋ－Ｋ关系计算了折射率的变化，得到了一定强度外电场条件下，折射率变化与波长、组份及阱宽的关系．按照我们的计算，折射率变化可达２．５４×１０－２．Abstract The quantumn-confined Stark effect is applied to calculate the excitonwaves and exciton energies in InP system.The red shift of exciton energies andthe variation of absorption coefficients in different electrical field are calculated.According to K-K relation,the variation of refractive indices is calculated and therelationship between the variation of refractive indices with wavelength,composition,and well width is obtained.By the calculation,the variation of indices is as largeas 0.0254.

关 键 词：相位调制器 半导体量子阱 光通信 

分 类 号：TN761[电子电信—电路与系统]