GaAs／AlGaAs单量子阱中界面粗糙度散射  

Interface Roughness Scattering in GaAs/AlGaAs Single Quantum Wells

作　　者：王杏华[1] 郑厚植[1] 余涛 Reino Laiho 

机构地区：[1]中国科学院半导体研究所 [2]芬兰图尔库大学ＷＩＨＵＲＩ物理研究所

出　　处：《Journal of Semiconductors》1994年第5期329-332,共4页半导体学报（英文版）

摘　　要：对三种不同生长条件、不同质量的ＧａＡｓ／ＡｌＧａＡｓ单量子阱进行了输运性质和光致发光谱的研究．在低迁移率的样品中，界面粗糙度对二维电子气的散射起主导作用．我们的研究也表明了：采用（ＧａＡｓ）４／（ＡｌＡｓ）２超晶格代替常规的ＡｌＧａＡｓ层，或在异质结界面生长过程中的停顿，都能有效地减少界面粗糙度．Abstract Transport properties and photoluminescence spectra have been studied in three types of GaAs/AlGaAs single quantum wells with very different growth condition and quality. For low mobility samples, it is found that interface roughness scattering to two dimensional electron gas is a dominant scattering mechanism. Our work also shows that reduction of the interface roughness can be achieved by either replacing conventional AlGaAs layers by(GaAs)./(AlAs)2 superlattices or employing growth interruption at the heterointerfaces.

关 键 词：界面 粗糙率 砷化镓 ALGAAS 量子阱 

分 类 号：TN304.23[电子电信—物理电子学]