低激发功率密度下GaAs_（1－x）Px：N（x＝0．88）的NNi对发光  

NNi Emission in GaAs_(1-x)Px:N(x=0.88)under Low Excitation Power Density

作　　者：俞容文[1] 郑健生[1] 糜东林 颜炳章[1] 

机构地区：[1]厦门大学物理系

出　　处：《Journal of Semiconductors》1994年第7期444-449,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：在低激发动率密度条件下研究了混晶材料ＧａＡｓ１－ｘＰｘ：Ｎ（ｘ＝０．８８）中的ＮＮｉ对束缚激子发光．发现随温度升高，在光致发光谱中依次出现ＮＮ３和ＮＮ１发光带，同时Ｎｘ带明显热猝灭．在低温下，降低激发功率密度，Ｎｘ谱带移向低能端并且窄化．结果表明，在低激发功率密度下，热激活的Ｎｘ→ＮＮｉ激子转移过程明显加强，激子转移的机制主要是变程跳跃过程．Abstract The NNi(i=1,3)emission in GaAs1-xPx:N with somewhat low composition x =0.88 under low excitation power density is observed for the first time.As temperature is raised, the NN3 and NN1 appear successively in CW spectrum,while the N.band quenches thermally.At low temperature,the narrowing and shift to lower energy of Nx band with decreasing of excitation power density are also observed.It is shown that the thermally activated Nx→NNi exciton transfer proceeds efficiently,and variable-range hopping mechanism is mainly responsible for transfer.

关 键 词：混晶 发光 GaAsi-xPx:N 

分 类 号：TN304.23[电子电信—物理电子学]