GaAs表面钝化的新方法：S_2Cl_2处理  

A Novel Passivating Technique of GaAs by S_2Cl_2 Treatment

作　　者：李喆深 蔡卫中[1] 苏润洲[1] 侯晓远 董国胜 金晓峰 丁训民 王迅 

机构地区：[1]复旦大学应用表面物理国家重点实验室,复旦大学李政道物理综合实验室,东北林业大学物理系

出　　处：《Journal of Semiconductors》1994年第7期505-510,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文用光致发光谱（ＰＬ）结合俄欧电子能谱（ＡＥＳ）和Ｘ射线光电子能谱（ＸＰＳ），首次研究了Ｓ２Ｃｌ２钝化的ＧａＡｓ（１００）表面．结果表明，ＰＬ强度较钝化前样品提高了将近两个数量级．钝化后的表面ＡＥＳ谱显示含有Ｓ，Ｇａ，ＡＳ，Ｃ和少量Ｃｌ原子而不含Ｏ原子．ＸＰＳ谱说明Ｓ原子和Ｇａ、Ａｓ原子都成键．与（ＮＨ４）２Ｓ处理的比较结果显示，几秒钟的．Ｓ２Ｃｌ２处理即可达到或超过几十分钟（ＮＨ４）２Ｓ处理的钝化效果．Abstract Photoluminescence (PL) spectroscopy combined with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) is used to study the S2Cl2passivated GaAs (100) surfaces. The PL intensity increases by two orders of magnitude after this treatment indicating a substantial reduction of surface recombination rate. AES data show that the sulfurized surface contains S,Ga,As,C and small amount of Cl atoms but no oxygen at all.This method is quite effective for removing the surface oxide of GaAs. XPS results reveal that S bond to both Ga and As atoms, and the sulfide layer is thicker than that by (NH4)2S treatment.

关 键 词：砷化镓 钝化 氯化硫处理 

分 类 号：TN304.23[电子电信—物理电子学]