YSZ薄膜材料的制备及电导性能  

SYNTHESIS AND CONDUCTING PROPERTIES OF YSZ THIN FILMS

作　　者：喻维杰 谭启[1] 彭定坤[1] 孟广耀[1] 曹传宝[1] 胡建恺[1] 张裕恒 

机构地区：[1]中国科学技术大学

出　　处：《材料研究学报》1994年第4期337-342,共6页Chinese Journal of Materials Research

基　　金：国家自然科学基金

摘　　要：检测了用微波等离子体化学气相淀积制备的ＹＳＺ薄膜的光学性能．样品对２３０—９００ｎｍ光的透过率在７２％左右．用交流阻抗谱技术测定了ＹＳＺ薄膜在１００—７００℃的电导性能、以倒扭摆法检测了样品的低频内耗．并分析了ＹＳＺ薄膜中氧空位激活和晶界原子弛豫引起的电导变化．The optical properties of YSZ thin films synthesized by microwave plasma CVD process have been examined. The transmittances in the range of 230-900nm wavelength are about 72%. The technique of ac impedance was used to measure the conductivity of YSZ films in the range of teemperature from 100-700℃. Low frequence friction for samples was determined by means of reverse rotation pendulum method. Combining the results both conductivity and internal friction measurements, Authors have discussed that the change of conductivity is related to the excitation of oxygen vacancies and the atomic relaxation occured at crystal boundary.

关 键 词：YSZ薄膜 氧离子导体 低频内耗 

分 类 号：TG148[一般工业技术—材料科学与工程]