Bi系银衬底厚膜的制备及其传输电流性质  

Preparation of Bi- based Silver Substrate Thick Film and Transport Current Characteristic

作　　者：王智河[1] 王玉贵[1] 韩汉民[1] 韩谷昌 王顺喜[1] 

机构地区：[1]中国科学院等离子体物理研究所

出　　处：《低温物理学报》1994年第4期319-324,共6页Low Temperature Physical Letters

摘　　要：采用物理沉积法制了名义组分为Ｂｉ（１．８）Ｐｂ（０．４）Ｓｒ２Ｃａ２Ｃｕ３Ｏｙ的银夹板厚膜．银夹板对厚膜成相的影响表现为热处理过程中银夹板阻止了厚膜中的物质尤其是Ｐｂ的挥发，使厚膜处于低氧压状态，加速了８０Ｋ相向１１０Ｋ相的转化．测量了银衬底厚膜在外加磁场平行和垂直于厚膜表面的传输临界电流密度Ｊｃ与磁场Ｈ的关系．典型数据为Ｊｃ＝２．３１×１０４Ａ／ｃｍ２（７７Ｋ．０Ｔ），３．６×１０３Ａ／Ｃｍ２（７７Ｋ，１Ｔ），磁场超过５Ｔ．无阻电流消失．在临界温度附近、零场下的Ｊｃ符合Ｊｃ＝Ｊ（ｃ０）（１－Ｔ／Ｔｃ）２关系．AbstractSliver clamp thick films with nominal composition Bi1.8Pb0.4 Sr2Ca2Cu3Oy were prepered through physical deposition.The influence of silver clamp on the phase growth shows Ag-clamp can prevent the volatizable composition of came material such as Pb from evaporation during heat treatment process, and make thick film in the atmosphere of low oxygen pressure, thus acceelerating the transition from 80K phase to 110K phase. The dependence of transport critical current density Jc Jc on magnetic field H at parallel and perpendicular to the surface of Silver substrate thick film was mearured. Its critical current density was 2.31×104A/cm2 at 77K and zero magnetic field; at H = 1T, Jc = 3.6×103 A/cm2 ; when H exceeds ST, supercurrent disappeared. It was found Jc was describe by the relation of Jc= Jco (1-T/Tc)2 near Tc and zero magnetic field.

关 键 词：铋系 超导膜 厚膜 临界电流 

分 类 号：O511.1[理学—低温物理]