大功率晶体管模块驱动电路  

High-power Transistor Module Driving Circuit

作　　者：章进法 林渭勋[1] 

机构地区：[1]浙江大学电机系,310027

出　　处：《电气自动化》1994年第4期20-23,共4页Electrical Automation

摘　　要：给出了一种适用于大功率晶体管模块的驱动电路。介绍了控制信号传输、驱动放大及异常工况下的有效保护等电路环节。讨论了信号传输中抗dv/dt位移电流干扰和驱动电路的保护容错等问题。试验及实际系统中应用表明,所提出的驱动电路具有抗干扰能力强,传输及驱动速度快,可用于驱动高至300A/1kv及以上容量大功率晶体管模块。A driving circuit suitable for high-power transistor module is given. The paper introduces the circuit links of control signal transmission, drive amplification and effective protection in abnormal operating mode, discusses the qustions on fighting dv/dt displacement current interference of signal transmission and tolerant protection of driving circuit, etc. Test and practical use shows the driving circuit features high antijamming property, fast transmission and driving can be used that.for driving high-power transistor module over a capacity of 300A/lkV

关 键 词：GTR模块 保护容错 驱动电路 

分 类 号：TN323.4[电子电信—物理电子学]