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作 者:刘柯林[1]
机构地区:[1]东南大学电子工程系
出 处:《电子器件》1994年第2期57-60,64,共5页Chinese Journal of Electron Devices
摘 要:在几种不同的衬底上制作SnO_2电热膜,研究了它的电阻温度特性、老化特性和失效机理。指出膜层缺陷浓度的变化、内应力的均匀化以及膜层与衬底间可动离子的扩散,是产生SnO_2电热膜老化的主要原因。提出了改善电热膜老化的措施。电热膜的失效属于早期失效,设计电热膜时,合理分配膜承受的功率密度,制作过程中保证膜的均匀性,选择适当的衬底材质和几何形状,可避免这种早期失效。We prepared the SnO_2 electrothermal thin films on several kinks of substrates. Their resistancetemperature property , their mechanism of aging and lose-effectivenees had been studied.We found out that the change of the defect density in the film layer,the homogeneity of the internal stress distribution and the diffusion of the active moving-ions between the film layer and the substrate are the main sources to cause the aging of the SnO_2 electrothermal thin film,We carry out the measure to improve the tendency to the aging of our films.The lose-effectiveness of the electro thermal film is to a early stage lose-effectiveness,If we could share the loaded power-density reasonably,ensure the film with a fine distribution homogeneity and choose carefully suitable substrate material and geometry, that early stage lose-effectiveness could be avoided.
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