高偏压金属─绝缘体─金属结的光发射  

LIGHT EMISSION FROM HIGH BIAS METAL-INSULATOR￣METAL JUNCTIONS

作　　者：江孟蜀[1] 郑克勤[1] 

机构地区：[1]渝州大学物理系,重庆大学应用物理系

出　　处：《发光学报》1994年第4期290-296,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金

摘　　要：我们制作了一种可在６—１１Ｖ偏压范围内均匀发射可见光的新型金属—绝缘体—金属结型发光器件，其内层结构是Ａｌ－Ａｌ２Ｏ３－ＭｇＦ２－Ａｎ（Ｃｕ），其承受偏压、单位面积发光功率及相应的外量子效应高过迄今已知的Ｍ－Ｏ－Ｍ遂道结型发光器件．本文首次报导并论证了这一由Ｓｃｈｏｔｔｋｙ热电子所激发的光发射及其物理图象：Ｓｃｈｏｔｔｋｙ热电子在ＡＯ（Ｃｕ）－真空界面激发表面等离极化激元（ＳＰＰ）；Ａｕ（Ｃｕ）－真空界面的ＳＰＰ通过表面粗糙度与外光子耦合．这一图象与该器件的电流—电压（Ｉ—Ｖ）、电流—温度（Ｉ－Ｔ）关系及其发射光谱的主要特征一致．e made a new type of high bias maetal-insulator-metal light-emitting junctions (Al-Al2O3-MgF2-An(Cu)], which emit visible optical radiation when biased at voltages in the range 6- 11V. The highest applied bias that the light-emitting devices can stand,and the output of per unit area and the corresponding power conversion efficiency werehigher than before metal-oxide-metal type light-emitting tunnel junctions. For the first time, the present paper report and argue this optical radiation excisted by the Schottky hot electrons and its physical picture: the hot electrons in the negative electrode areforced to positive electrode by the exerted electrical field through Schottky effect and then excite at An (Cu)-vacuum interface surface plasmon-polarition (SPP), which are in turn coupled to external radiation through surface roughness. This picture is supported by measurement of current-voltage (I-V) and current-temperature(I-T) characteristics of the light-emitting devices, and by the observed light emission spectra from the lightemitting devices.

关 键 词：SPP 结型发光器件 发光隧道结 肖特基效应 

分 类 号：TN383.1[电子电信—物理电子学] O432.31[机械工程—光学工程]