新型Si光电发射材料的激活技术及激活装置  

The Activation Technology of Novel Si Photoemissive Materials and Experimental Setup

作　　者：郭太良[1] 林渠渠 林立炜 林建光[1] 高怀蓉 

机构地区：[1]福州大学电子科学与应用物理系

出　　处：《福州大学学报（自然科学版）》1994年第3期25-29,共5页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金

摘　　要：介绍了新型反射式Ｓｉ光电发射材料（Ｓｉ－Ｎａ３Ｓｂ－Ｃｓ）－Ｏ－Ｃｓ，（Ｓｉ－Ｋ３Ｓｂ－Ｃｓ）－Ｏ－Ｃｓ，（Ｓｉ－ｃｓａｓｂ－Ｃｓ）－Ｏ－Ｃｓ和（Ｓｉ－Ｎａ２ＫＳｂ－Ｃｓ）－Ｏ－Ｃｓ的激活技术．给出了新型Ｓｉ光电发射材料的逸出功、灵敏度及其稳定性并与Ｓｉ和Ｎａ２ＫＳｂ（Ｃｓ）光电材料的性能进行比较，简要讨论了影响灵敏度和稳定性的一些因素．叙述了为制备新型Ｓｉ光电发射材料所设计并加工的碱金属源、锑源、氯源及其激活系统．The activation technology of novel reflection mode Si photoemissive materials(Si-Na3Sb-Cs)-O-Cs,(Si-K3Sb-Cs)-O-Cs,(Si-Cs3Sb-Cs)-O-Cs and(Si-Na2KSb-Cs)-O-Cs is described.The work functions,photoemission sensitivities sensitivity and stability of the novel Si photoemissive materials are presented and compared with that of Si and Na2KSb(Cs) photoemissive materials.The main factors affecting the photoemission sensitivity and stability of photoemissive materials are discussed briefly.In order to fabricate novel Si photoemissive materials,an activation system including alkali metal source,antimony source and oxygen source is designed.

关 键 词：光电发射材料 激活 逸出功 硅 

分 类 号：TN304.12[电子电信—物理电子学]