CoMnNiO非晶薄膜热致相变  

Thermally Induced Phase-Transition of CoMnNiO Amorphous Thin Film

作　　者：谭辉[1] 陶明德[1] 宋世庚[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《功能材料》1994年第4期350-353,369,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助的课题!(NO.19174067)

摘　　要：射频溅射的ＣｏＭｎＮｉＯ非晶薄膜在一定温度下热处理产生晶化，经历一个非晶－微晶－多晶的相变过程。ＸＲＤ和ＴＥＭ分析表明ＣｏＭｎＮｉＯ非晶薄膜在３００℃开始晶化，６００℃晶化完全，生成尖晶石多晶。其相变机制是原子扩散和链状组织的规则排列以及有序集团的凝聚合并。When annealed at various temperature from 300℃ to 900℃, the amorphous film of CoMnNiO deposited by R. F. Sputting transforms into microcrystalline and polycrystalline, and grain size increases with increasing annealing temperature and time. The analysis by XRD and TEM indicate that the crystallization for the amorphous films take place at 300℃ and complete at 600℃ with the spinel structure. the mechanism of the phase-transition can be condisered as the diffusion of atoms, regular arrangement of chian-structure and gather of orderly clusters in the material during annealing.

关 键 词：热致相变 微结构 非晶薄膜 CoMnNiO 

分 类 号：TN304.8[电子电信—物理电子学] O484.1[理学—固体物理]