H^＋注入锗酸铋晶体表面层的性质  

Properties of Surface Layer of H￣+-Implanted Bi_4Ge_3O_(12) Crystals

作　　者：冯锡淇[1,2] 邵天浩 

机构地区：[1]中国科学院上海硅酸盐研究所 [2]中国科学院上海治金研究所

出　　处：《光学学报》1994年第2期203-207,共5页Acta Optica Sinica

基　　金：国家自然科学基金

摘　　要：Ｈ＋注入锗酸铋（Ｂｉ４Ｇｅ３Ｏ１２或ＢＧＯ）晶体引起某些效应，如辐射损伤，光学吸收和近表层区域的晶体分解．经Ｈ＋注入后，ＢＧＯ晶体的颜色变成棕色，但实验中证实不了该变化是由色心的产生所引起．此外，实验中也未观察到Ｈ＋注入ＢＧＯ晶体中有离子束诱发的光学活性变化．可见在注入过程中，未发生从Ｂｉ４Ｇｅ３Ｏ１２转变到Ｂｉ１２ＧｅＯ２０的结构相变，由此预见，注入过程中可能发生离子束引起的晶体分解．Ｈ＋注入也在晶体表层形成平面波导层，波导层的折射率有微小提高（蓝光０．０７％）．该效应也有可能由于Ｈ＋注入诱发的晶体分解所导致．H+-implantution in Bi4Ge3O12 (BGO) crystals causes radiation damage, optiCal absorption and decomPOsition of the near-surface region of the crystals. The colour of the BGO samples after H+-implantation changed to brown, but if is failed to prove that this change was caused by the producing of colour centers. In addition, no ion beam-induced optiCal activity was experimentally observed in H+-implanted BGO. It implied that there was no structure phase transition from Bi4Ge3O12 to Bi12Ge O20 version during H+-implantution. It can be assumed that ion beam-induced decomposition may happen during ion implantution. Optical waveguide has beeh formed in BGO substrate by H+-implantution. There was a refractive index enhancement in the implanted BGO sample,Specinlly for blue light (0. 488 μm). It might be resulted from the ion beam-induced decomposition.

关 键 词：质子注入 锗酸铋晶体 光学效应 

分 类 号：TN252[电子电信—物理电子学]