外延硅dE／dX探测器的研制  

Development of Epitaxial Silicon Detectors

作　　者：王柱生[1] 晁致远[1] 许金兰[1] 徐晓冀[1] 胡志强[1] 

机构地区：[1]中国科学院近代物理研究所

出　　处：《核电子学与探测技术》1994年第3期149-155,共7页Nuclear Electronics & Detection Technology

摘　　要：本文介绍了厚度为５．２～６．０、１０～１３、１９μｍ，有效面积为２８～１５４ｍｍ￣２的外延硅ｄＦ／ｄＸ探测器的研制工艺，主要用途、测试结果（对９．８７Ｍｅｖα粒子的能损ＡＥ的分辨为５６～１２８ｋｅｖ）和在核物理实验中的应用。In order to meet the needs of nuclear physics experiments and for rising detection efficien-cy,the epitaxial Si dE/dX surface barrier detectors having active area of 28～154mm￣2 andthickness of 5.2～19μm have been developed.The resolution of 56～128keV for energy loss(△E)of 8. 87 MeV α-particles have been obtained.This kind of detector can be used for themeasurement of α-particle,low energy proton,and for distinguishing particle.The detectorshave been used for distinguishing 0.78 Mev￣(20)Na β-delayed low energy α-particle decay.(

关 键 词：外延硅 dE/dX 探测器 半导体探测器 

分 类 号：TL814[核科学技术—核技术及应用]