多孔硅的制备和光致发光  

Preparation and Photoluminescence of Porous Si

作　　者：车彦龙[1] 韩力[1] 费浩生[1] 孙桂娟[1] 倪春耀 崔雪峰 

机构地区：[1]吉林大学物理系

出　　处：《吉林大学自然科学学报》1994年第3期57-61,共5页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：用阳极氧化方法制备了多孔硅样品，研究了样品在室温下受紫外光（３５５ｎｍ）激发的发光特性．发现随着阳极氧化电流密度和腐蚀时间的增加，发光峰呈蓝移。用ＫＯＨ溶液和水对多孔硅处理，发光光谱有明显变化。解释了有关发光现象。Porous silicon samples which were prepared by anodic etching exhibited strongvisible luminescence at room temperature under the illumination of 355 nm ultrashort-pulsedlaser. The luminescence spectral peak wavelength had a blue shift as the etching current andthe etchng time was increased,respectively.We used different methods to treat the PS sam-ple,such as,indulging it in KOH solution for several senconds or in water for a long time,these methods had different effects on luminescence spectra. It was found that the lumines-cence of PS was the relative resuIt of the compound of silicon surface and pore in siliconbulk.

关 键 词：多孔硅 阳极氧化 光致发光 

分 类 号：TN383.2[电子电信—物理电子学]