CH_4离子束增强沉积对TiC薄膜显微硬度的影响机制  

INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS

作　　者：刘长洪[1] 李文治[1] 李恒德[1] 

机构地区：[1]清华大学

出　　处：《金属学报》1994年第7期B318-B322,共5页Acta Metallurgica Sinica

基　　金：国家自然科学基金;国家科委八六三项目

摘　　要：研究了双离子束沉积ＴｉＣ薄膜的形成．离子束反应溅射膜的显微硬度比ＣＨ_４高子束增强沉积膜的显微硬度高．ＸＰＳ，ＴＥＭ和ＡＥＳ分析表明后者硬度低的一个重要原因是ＣＨ_４离子束轰击引入过量的自由碳原子．Synthesis of TiC films was investigated by dual ion beam deposition. Higher Knoop hardness number on the TiC films prepared by CH_4 ion beam enhanced deposition as comparison with that without CH_4 was obtained. The important reason, which showed by XPS, TEM and AES analyses, may be due to the excess C introduced to the TiC films during ion beam bombardment.

关 键 词：碳化钛薄膜 离子束沉积 硬度 

分 类 号：TB43[一般工业技术]