大尺寸Bi_（12）S_iO_（20）单晶生长的研究  

Crystal Growth and Optical Properties of Large Size Single Crystals of Bismuth Silicon Oxide

作　　者：张尚安[1] 魏世道[1] 韩奇阳 胡卫东 

机构地区：[1]中科院安徽光学精密机械研究所

出　　处：《量子电子学》1994年第1期71-76,共6页

摘　　要：本文介绍了ＢＳＯ单晶的若干主要性能。报导了用电阻加热提拉法，从φ８０×６０ｍｍ铂金坩埚中生长出φ４０×６０ｍｍ重达８００克左右的优质ＢＳＯ大单晶。研究并确定了生长大尺寸ＢＳＯ晶体的工艺条件，并对晶体中若干主要缺陷进行了观察分析，讨论了它们与生长工艺条件的关系，以及提高晶体质量的主要途经。Single crystal bismuth silicon oxide (Bi12 Si O20 or BSO ) is a Photoretractory material. Since it also has photoconductive and linear photoelectric effects, it has the potential for many varied applications, such as holographic storage,interterometry photoretractory imaging, phase conjugation, and real time image processing.We report the Czochralski growth of BSO using a resistance heating method.We have successfully pulled a single crystal 40mm diameter ×80 mm long weighing 800g using a platinum crucible (φ80mm ×60mm).We hare determined the growthparameters needed to grow large size single crystals of BSO. The majo rstructural detects in the crystal, including tractures, taceting, impurity inclusion, and growth striations have also been investigated We dsscuss the defect formation mechanism and its relation to the melt flow characteristics.Finally, we present modifications of growth method which would improvethe crystal quality.

关 键 词：晶体生长 提拉法 温度 晶体缺陷 

分 类 号：O782.5[理学—晶体学]