高临界电流密度外延T1_2Ba_2CaCu_2O_8超导薄膜  

HIGH CRITICAL CURRENT OF EPITAXIAL T1_Ba_2CaCu_2O_8 SUPERCONDUCTING THIN FILMS

作　　者：阎少林[1] 朱亚平[1] 阎杰[1] 方兰[1] 杨小明[1] 司敏山[1] 曹慧丽[1] 宋庆熙[1] 陈劲桓 周杏弟[1] 张清敏[1] 

机构地区：[1]南开大学电子科学系,南开大学物理系,南开大学能源材料化学所,南开大学测试中心

出　　处：《南开大学学报（自然科学版）》1994年第1期1-6,共6页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家高技术发展计划(863)资助

摘　　要：本文用直流磁控离子溅射及后热处理工艺在（００１）ＬａＡ１０３单晶衬底上制备的Ｔ１２Ｂａ２ＣａＣｕ２Ｏ８高温超导薄膜，经Ｘ－光衍射θ－２θ和Φ扫描测试证明，薄膜是外延生长的。薄膜的超导转变温度高达１０８．６Ｋ。在液氮温度下，零磁场时的临界电流密度达７．６×１０６Ａ／ｍ２。薄膜具有很强的磁通钉扎能力。当垂直于膜面外加一个４特斯拉的磁场时，临界电流密度仍可保持１．１×１０６Ａ／ｃｍ２。High-Tc superconducting T12Ba2CaCu2O8 thin films have been fabricated on (001) LaA1O3 substrates by dc magnetron sputtering and post annealing technique. X-ray θ-2θand Φ scan results proved that the thin films were epitaxially grown. The highest transition temperature is about 108.6K and the critical current density is as high as 7.6×106A/cm2 at 77K in zero magnetic field. The epitxial thin films have strong magnetic flux pinning ability. When applied a 4Tesla magnetic field perpendiculatr to the thin film,the critical current density of 1.1×106A/cm2 can also be obtained.

关 键 词：外延薄膜 临界电流密度 超导薄膜 

分 类 号：O484.1[理学—固体物理]