Si:H薄膜的微结构及输运性质  

THE MICROSTRUCTURE AND TRANSPORT PROPERTIES OF Sl:H FILMS

作　　者：周心明[1] 郑家贵[1] 曾家玉[1] 黄天荃[1] 邱淑蓁 蔡亚平[1] 徐晓菲[1] 冯良桓[1] 

机构地区：[1]四川大学

出　　处：《太阳能学报》1989年第1期82-88,共7页Acta Energiae Solaris Sinica

摘　　要：用扫描电镜观察Si:H薄膜的剖面,发现用平板电极沉积的Si:H薄膜呈柱状结构,而用环形电极沉积的膜具有层状结构。喇曼谱和X射线谱表明,这两种结构对应于微晶相的存在。测定薄膜的暗电导与温度间的关系,发现薄膜的电导激话能为各向异性。联系耦合方式讨论了薄膜的生长机制。The microstructure of the cross-section of Si:H films has been observed by scanning electron microscope. The results show that the microstructure of the films deposited by using plate electrodes are in the column-like shape and that of the films deposited by sling circular electrodes are in the layer-like shape. The results of Raman scattering spectra and X-ray spectra show that the two kinds of microstructure correspond to the existence of microcrystalline phase. The relation between dark conductivity and temperature of Si: H films has been determined. It was found that the conductance activation energy of these films is anisotropic. The growth mechanisms of the films related to coupling electrodes have been discussed.

关 键 词：Si:H薄膜 微结构 输运性质 

分 类 号：TM914.4[电气工程—电力电子与电力传动]