带有缓变层的大面积集成型a－Si：H太阳电池的研制  

DEVELOPMENT OF LARGE AREA SINGLE JUNCTION INTERGRATED A-Si:H SOLAR CELL WITH CARBON COMPOSITION GRADED LAYER

作　　者：杨红[1] 于化丛 胡宏勋 崔容强[1] 穆少俊 刘明义 辛士宇 

机构地区：[1]西安交通大学,哈尔滨-克罗拉太阳能电力公司

出　　处：《太阳能学报》1994年第3期235-239,共5页Acta Energiae Solaris Sinica

摘　　要：报道了把缓变层用于大面积（２７９０ｃｍ２）单结集成型ａ－Ｓｉ：Ｈ太阳电池板工业化生产的研究工作。分析了它对太阳电池板性能参数Ｖｏｃ、Ｉｓｃ、ＦＦ、η的影响和对提高ａ－Ｓｉ：Ｈ太阳电池板转换效率的作用。试验所得电池板的平均开路电压达２５．１Ｖ，平均转换效率达６．２％，分别比同时生产的无级变层电池板的水平提高９．１３％和１６．９８％。试验中最好的电池板开路电压达２５．６Ｖ，转换效率达６．６％。The development of large area (2790cm2) single junction integrated a-Si:H solar cell panel with carbon compositioil grated layer (CGL: C)is reported.The effect of CGL:C on the parameters Voc, Isc , FF,EF is analysed. The role of CGL: C for improving the photoelectric conversion is discussed. The average Voc of solar cell panels is as high as 25. 1 V. average conversion efficiency is as high as 6.2%. which have been improved by 9. 13% and by 16. 98% than that was produced at same time without CGL: C. A solar cell panel with Voc of 25.6V and conversion efficiency of 6.6%has been prepared.

关 键 词：缓变层 集成型 太阳能电池 制造 

分 类 号：TM914.4[电气工程—电力电子与电力传动]