铈掺杂对PSN-PZN-PMS-PZT压电陶瓷性能的影响  

Effect of CeO_2 Doping on the Properties of PSN-PZN -PMS-PZT Piezoelectric Ceramics

作　　者：陆翠敏[1] 孙清池[1] 孙琳[1] 徐明霞[1] 

机构地区：[1]天津大学材料科学与工程学院,天津300072

出　　处：《硅酸盐通报》2005年第1期33-35,40,共4页Bulletin of the Chinese Ceramic Society

基　　金：天津大学高温结构陶瓷及工程陶瓷加工技术教育部重点实验室资助(10232030).

摘　　要：采用二次合成工艺制备PSN-PZN-PM S-PZT五元系压电陶瓷。研究准同型相界组成点处铈掺杂对压电陶瓷介、压电性能影响。结果发现随着C eO2的添加,介电常数增加,居里温度降低;压电常数增加;机械品质因数和机电耦合系数下降;铈掺杂在强场下对该系统介电性能的影响基本上和弱场下的变化趋势相近,随着外加场强的增加,介电常数和介电损耗增加。Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using two-step method.The effects of CeO2 doping on piezoelectric and dielectric properties of the system were investigated at morphotropic phase boundary(MPB).The results reveal that the relative dielectric constants ε33T/ε0 are enhanced,the curie temperatures Tc are lowed,the piezoelectric constants d33 are enhanced,the mechanical quality factor Qm are enhanced and the electromechanical coupling coefficient Kp are lowed with the increase of CeO2 contents.On the other hand, the effects of CeO2 doping on the dielectric properties of PSN-PZN-PMS-PZT piezoelectric ceramics at strong electric fields are consistent with the change at weak electric fields.The values of dielectric constant and dielectric loss are enhanced with the increasing of electric fields.

关 键 词：机械品质因数 合成工艺 压电常数 介电性能 PZT压电陶瓷 准同型相界 制备 铈掺杂 压电性能 机电耦合系数 

分 类 号：TQ174[化学工程—陶瓷工业] TM282[化学工程—硅酸盐工业]