宽带GaAsFET微波单片集成单刀双掷开关  

A Broadband GaAs MMIC SPDT Switch

作　　者：郝冠军 夏先齐 李剑平 

机构地区：[1]南京电子设备研究所

出　　处：《微波学报》1994年第2期40-44,共5页Journal of Microwaves

摘　　要：本文报道了一种采用串、并联FETs结构的GaAsMMIC单刀双掷开关.芯片尺寸为0.97×1.23mm.在DC—10GHz频率范围内,插入损耗小于2.2dB,隔离度大于32dB,反射损耗大于12dB,开关时间小于1ns,在5GHz下的功率处理能力大于20dBm.此开关具有极低的直流功率耗散.A monolithic microwave broadband single pole double throw (SPDT) switch empolying series and shunt GaAs FETs is present. The chip size is 0. 97 x1. 23mm. In DC-10GHz freqency range , better than 2. 2dB insertion loss. 32dB Isolation and 12dB return loss have been achived . The switch demonstates a power handling cspacity of better than 20dBm at 5GHz and a switching time less than lns . It has very low DC power dissipation .

关 键 词：单片集成电路 单刀双掷开关 GAASFET 微波开关 

分 类 号：TN631[电子电信—电路与系统]