低通滤波器结构的改进分析及模拟  

The Modified Analysis and Simulation of Lowpass Filter Structure

作　　者：刘崇新[1] 

机构地区：[1]西安交通大学电气系

出　　处：《微电子学与计算机》1994年第3期53-56,共4页Microelectronics & Computer

摘　　要：在高频域，ＭＯＳＦＥＴ的分布参数对全集成ＭＯＳＦＥＴ－Ｃ滤波器的特性有很大影响，本文应用ＳＰＩＣＥ（Ⅱ）通用模拟电路程序，采用非理想运算放大器单极点电路模型，考虑到ＭＯＳＦＥＴ的寄生电容，对一个六阶切比雪夫低通滤波器全ＭＯＳＦＥＴ－Ｃ平衡结构应用传输线模型进行了仿真分析。At high frequencies, the distributive parameters of MOSFET have great effects on the characteristics of fully integrated MOSFET-C filters. In this paper,full integrated balanced MOSFET -C sixth-order chebyshev lowpass filter is discussed. Its amplitudefrequency and phase-frequency characteristics of output voltage are simulated using the transmission line model by SPICE (Ⅱ) program while MOSFET parasitic Capacitances and Single-pole nonideal op amps model are.considered, and compared with those on ideal cases in which only discreted linear components and ideal op amps are emploied'.Some practical suggesition are proposed.

关 键 词：低通滤波器 结构 分析 模拟 

分 类 号：TN713.4[电子电信—电路与系统]