硅酸铋（Bi_（12）SiO_（20））晶体生长的研究进展  

Progress in Study on Crystal Growth of Bismuth Silicon Oxide

作　　者：徐学武[1] 廖晶莹[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1994年第2期129-138,共10页Journal of Inorganic Materials

摘　　要：本文介绍了光折变晶体ＢＳＯ生长研究的国内外进展．对ＢＳＯ晶体生长方法、组分和结构缺陷表征、材料性能的改进等几个方面进行了综合评述．讨论了各种生长方法的优缺点以及阻碍ＢＳＯ晶体批量生产的几种因素．指出坩埚下降法在实现大尺寸优质ＢＳＯ晶体的批量生产方面已显示出优越性，它应该成为今后ＢＳＯ晶体生长研究的一个重要发展方向．The progress in study on crystal growth of photorefractive BSO was introduced. Several aspectssuch as growth method, constitutional and structural defect, and improvement of material propertywere summarized and reviewed. The merits and demerits of various growth methods and some factorswhich hindered the mass production of BSO crystals were discussed. It is pointed out that the verticalBridgman method has many advantages in realizing the mass production of large sized BSO crystals withhigh optical quality, and it should be an important orientation of the future studying on BSO crystalgrowth.

关 键 词：硅酸铋 晶体生长 

分 类 号：O614.532[理学—无机化学]