环境中二氧化硫监测的多孔硅光学传感方法研究  

Optical Sensing Method Based on Photoluminescence Quenching of Hydrosilylation Porous Silicon for Monitoring Sulfur Dioxide in Environment

作　　者：黎学明[1] 潘进[1] 万体智[2] 张玉奇[2] 

机构地区：[1]重庆大学化学化工学院,重庆400044 [2]重庆大学材料科学与工程学院,重庆400044

出　　处：《分析化学》2005年第3期321-324,共4页Chinese Journal of Analytical Chemistry

基　　金：国家自然科学基金资助项目(No.20007006)

摘　　要：提出一种用于SO2监测的多孔硅光学传感方案,其原理是以光催化氢化硅烷化处理的多孔硅作为敏感材料,根据多孔硅光致发光峰猝灭程度与SO2浓度间定量关系,实现SO2传感.实验采用电化学方法将n-型单晶硅腐蚀形成多孔硅并进行氢化硅烷化处理,获得敏感膜层;研究多孔硅发光特性、传感特性、选择性和稳定性.结果表明:该多孔硅具有良好光致发光性能,在大气环境和碱性介质中稳定性较高;当SO2体积分数为5×10-5～2.5×10-4时,多孔硅传感SO2的过程服从Stern-Volmer方程,其Stern-Volmer常数k为5×10-4;同时,体积分数为0.05的CO2或NO以及体积分数为0.01的CO或NO2对多孔硅光致发光峰强度无影响.用本法测定样品中SO2含量,结果满意.An optical sensing method is proposed for monitoring the SO2 concentration in environment: The method depends on the photoluminescence of a light-promoted hydrosilylation porous silicon which can be reversibly quenched by SO2 gas. When the porous silicon is exposed to a SO2 environment, its intensity of photoluminescence peak changes with the SO2 concentration. The freshly etched porous silicon was formed by electrochemical anodization of n-type single crystal silicon wafers. In order to improve stability of porous silicon, the light-promoted hydrosilylation method was used to treat the freshly etched porous silicon. The photoluminescence, sensing performance, stability and specificity for porous silicon were studied. The experimental results show that the hydrosilylation porous silicon is provided with favorable photoluminescence and stability; when SO2 concentration ranges from 5 x 10(-5) to 2. 5 x 10(-4) ( V/V), the quenching process of porous silicon is in accord with Stern-Volmer equation, and the Stern-Volmer constant k is equal to 5 x 10(-4). Moreover, the other gas such as N-2 CO2 (0- 05, V/V), NO (0. 05, V/V), -CO (0. 01, V/V), NO2 (0. 01, V/V) have no effect on photoluminescence of the porous silicon. The result demonstrates the feasibility of optical sensing methods based on photoluminescence quenching of hydrosilylation porous silicon for monitoring sulfur dioxide in environment.

关 键 词：多孔硅 光致发光 猝灭 光学 硅烷化 传感 常数 发光特性 单晶硅 敏感材料 

分 类 号：X830[环境科学与工程—环境工程]