一种新型汞离子选择薄膜传感器  

A Novel Mercury Ion Selective Thin Film Sensor

作　　者：门洪[1] 邹绍芳[1] Andrey Legin 王平[1] 

机构地区：[1]浙江大学生物医学工程与仪器科学学院生物传感器国家专业实验室,生物医学工程教育部重点实验室 [2]Chemistry Department.St.Petersburg University,St.Petersburg,199034,Russia

出　　处：《分析化学》2005年第3期428-431,共4页Chinese Journal of Analytical Chemistry

基　　金：国家"863"高技术资助项目(No.2001AA635060)

摘　　要：采用脉冲激光沉积技术,在光寻址电位传感器表面上沉积了对二价汞离子敏感的薄膜,制备了一种新型汞离子选择薄膜传感器,靶材成分为HgAgIS,基底为p型单晶硅片,金属接触层为Cr/Au。该薄膜传感器在3星期内显示了良好的重复性和稳定性;检出限为3×10-6mol/L;响应时间小于2min,适用pH范围小于2。对干扰离子和迟滞效应等也进行了研究。该传感器具有测量快速灵活、所需样品少、动态范围宽等特点,因为把电位信号转化为对光激发的交流电流信号进行测量,所以提高了灵敏度。同时也证明了脉冲激光沉积是适合制备薄膜传感器的一种新技术。A thin film sensitive to mercury(II) was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of the pulsed laser deposition ( PLD) technique and a novel mercury ion selective thin film sensor was prepared. The target material is composed of Hg-Ag-I-S, the substratum is single crystal silicon of p type and the metal contact layers is Cr/Au. The thin film sensor shows good repetition and stability in 3 weeks. The detection limit is 3 x 10(-6) mol/L and the response time is less than 2 min. The scope of pH application is less than 2. Interfering ions and hysteresis etc. are also investigated. The thin film sensor with rapid detection, few sample solution and broad measuring dynamic range, increases sensitivity for its potentiometric signal is transformed to alternating-current signal agitated by light to measure. At the same time PLD is proved to be a new technique to prepare thin film sensor.

关 键 词：薄膜 脉冲激光沉积 干扰离子 迟滞效应 汞离子 证明 单晶硅片 新型 制备 靶材 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]