Laser induced damage of multi-layer dielectric used in pulse compressor gratings  

作　　者：孔伟金 赵元安 王涛 邵建达 范正修 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics

出　　处：《Chinese Optics Letters》2005年第3期181-183,共3页中国光学快报（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China (No. 10376040)the National "863" Project of China (No. 863-804).

摘　　要：Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2° incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2° incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2° incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2° incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.

关 键 词：CALCULATIONS Dielectric materials Diffraction gratings Electric fields EVAPORATION Morphology Optical multilayers PITTING 

分 类 号：TN249[电子电信—物理电子学]