铸造多晶硅中铜沉淀的电子束诱生电流  

EBIC STUDY ON COPPER PRECIPITATION IN MULTICRYSTALLINE SILICON

作　　者：陈君[1] 杨德仁[1] 席珍强[1] 阙端麟[1] 关口隆史 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]日本国立物质材料研究所纳米材料实验室

出　　处：《太阳能学报》2005年第1期1-5,共5页Acta Energiae Solaris Sinica

基　　金：国家杰出青年基金(60225010)国家自然科学基金(50032010)

摘　　要：利用电子束诱生电流(EBIC)研究了不同热处理条件下太阳电池用铸造多晶硅材料中的铜的沉淀特性, 并与铜在普通直拉硅单晶中的沉淀行为进行了比较。EBIC观察发现,在铸造多晶硅中,热处理的冷却速率和结晶学缺陷(如晶界和位错)共同影响着铜在多晶硅中的扩散和沉淀性质。样品在快速冷却时,在晶界以及晶粒内形成了很高密度且分布较均匀的细小铜沉淀;而在慢速冷却时,则是形成密度较低,较大尺寸的铜沉淀。EBIC 的衬度计算显示,慢速冷却下形成的铜沉淀具有更强的复合特性,且铜沉淀在晶界上的分布具有选择性。最后, 讨论了铜沉淀在铸造多晶硅中的形成机理。The mechanism of precipitation of copper in multicrystalline silicon (mc-Si) and Czochraski silicon (Cz-Si) under different thermal treatment was investigated by means of Electron Beam Induced Current (EBIC) in this paper. High density and small size copper precipitation was found both in air cooled mc-Si and Cz-Si samples, while low density and big size copper precipitation was found in slow cooled mc-Si and Cz-Si samples. The EBIC contrast of copper precipitation formed under slow cooling was much larger than that of copper precipitation formed under air-cooling. The distribution of copper precipitation at different grain boundaries was inhomogeneous and may be determined by the energy of grain boundaries.

关 键 词：铸造多晶硅 铜沉淀 EBIC 

分 类 号：TK514[动力工程及工程热物理—热能工程]