Piezoresistive Sensors Based on Carbon Nanotube Films  

作　　者：LuJian-wei WANGWan-lu LIAOKe-jun WANGYong-tian LIUCHang-lin ZengQing-gao 

机构地区：[1]Dept.ofAppl.Phys.,ChongqingUniversity,Chongqing400044,CHN／／ChongqingDailyGroup,Chongqing400010,CHN [2]Dept.ofAppl.Phys.,ChongqingUniversity,Chongqing400044,CHN [3]ChongqingOptoelectronicsResearchInstitute,Chongqing400060,CHN

出　　处：《Semiconductor Photonics and Technology》2005年第1期61-64,共4页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundation of China (60376032)

摘　　要：Piezoresistive effect of carbon nanotube films was investigated by athree-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapordeposition. The experimental results showed that the carbon nanotubes have a striking piezoresistiveeffect. The relative resistance was changed from 0 to 10.5 X 10^(-2) and 3. 25 X 10^(-2) for dopedand undoped films respectively at room temperature when the microstrain under stress from 0 to 500.The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change inthe band gap for the doped tubes and the defects for the undoped tubes.Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes have a striking piezoresistive effect. The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon （30） at 35℃. The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

关 键 词：carbon nanotubes STRAIN PIEZORESISTIVITY resistance change band gap 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]