化学氧化对多孔硅表面态和光致发光的影响  

The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon

作　　者：李经建[1] 刁鹏[1] 蔡生民[1] 侯永田[2] 王昕[2] 张树霖[2] 

机构地区：[1]北京大学化学系,北京1000871 [2]北京大学物理系,北京100871

出　　处：《物理化学学报》1994年第8期737-740,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金

摘　　要：The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn’t SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.

关 键 词：多孔硅 光致发光 化学氧化 表面态 

分 类 号：O73[理学—晶体学]