无规分形衬底上银薄膜的I－V特性  

THE I-V CHARACTERISTICS OF SILVER THIN FILM ON THE RANDOM FRACTAL SUBSTRATE

作　　者：王劲松[1] 叶高翔[1] 许宇庆[1] 张其瑞[1] 

机构地区：[1]浙江大学物理系,杭州大学物理系

出　　处：《物理学报》1994年第10期1688-1692,共5页Acta Physica Sinica

摘　　要：在无规分形结构的ａ氧化铝陶瓷断面上，用射频溅射法镀制了银薄膜，其Ｉ－Ｖ特性在空气中呈非线性行为，而在原位真空测量中表现为开关形式的电压击穿效应。基于衬底的结构特性，作者对上述现象作了合理的解释。The silver thin films were deposited on the substrates of the a-alumina ceramicwhich possess a random fractal structure.The I_V characteristics of such films exhibit nonlinear behavior in air and a switching type voltage breakdown effect by insitu measurement in vacuum. Based on the structure geometry of the substrate,weexplaine these phenomena with the developed Randonm Tunnelling Junction Networkmodel.

关 键 词：薄膜 银 伏-安特性 无规分形衬底 

分 类 号：O484.42[理学—固体物理]