低噪声晶体管放大器的设计  

DISIGN OF THE LOW-NOISE TRANSISTOR AMPLIFIER

作　　者：吴兴源[1] 吴飞[1] 刘中原[1] 

机构地区：[1]西南师范大学物理系,生物系,大连理工大学物理系

出　　处：《西南师范大学学报（自然科学版）》1994年第2期139-146,共8页Journal of Southwest China Normal University(Natural Science Edition)

摘　　要：以实现声频放大器低噪声化为出发点，阐述了具体设计的几个方面．从低噪声放大器设计的基本原理和方法入手，对晶体管放大器的噪声模型（Ｅｎ－Ｉｎ模型）作了分析，并推导出一种实用的最佳源电阻Ｒｓｏｐｔ近似求法．还对系统电路的低噪声设计略加探讨．In order to make the voice amplifier of low noise , details for the concret desigu are explained.Based on the basic principles and approaches for the making of the low-noise amplifier , we analysed the noise model of the transistor amplifier(En- In model) and provided a practical method to get the best source resistant Rsopt. Finally, we also briefly discussed the low noise design of the system circuit.

关 键 词：晶体管放大器 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]