Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe_2 thin films  

作　　者：方玲 张弓 庄大明 赵明 吴敏生 

机构地区：[1]Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Journal of Central South University of Technology》2005年第1期13-16,共4页中南工业大学学报（英文版）

基　　金：Project(2004AA513023) supported by the National High Technology Research and Development Program of China

摘　　要：Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe_2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe_2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe_2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu_(11)In_9) phase with In-rich solid solution. Stoichiometric CuInSe_2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe_2 thin film shows P-type conductivity and its resistivity reaches 1.2×10~3Ω·cm.

关 键 词：solar cell Cu-In precursor CuInSe_2 thin film SELENIZATION magnetron sputtering 

分 类 号：TB43[一般工业技术]