异质面GaAs太阳电池暗电流－电压特性的隧穿效应  

Tunneling Effects in the Current-voltage Characteristics of GaAs Heteroface Solar Cell

作　　者：陈世帛[1] 周必忠[1] 王加宽[1] 闵惠芳[1] 王振英[1] 

机构地区：[1]厦门大学物理学系,中国科学院上海冶金研究所

出　　处：《厦门大学学报（自然科学版）》1994年第1期31-35,共5页Journal of Xiamen University：Natural Science

摘　　要：在２００～３００Ｋ温度内测量了由ＬＰＥ生长的异质面高效ＧａＡＬｓ太阳电池暗电流－电压特性的温度关系，对实测的Ｉ－Ｖ特性进行拟合分析，认为低温低偏压下的过剩电流，起因于耗尽层内禁带中局域态间热协助的多级带间隧穿效应．Dark forward current-voltage characteristics as a function of temperature between 200 K and 300 K for GaAs heteroface solar cell produced by LPE process were measured. Theoretical fitting-analysis on the measured values were made. The observed excess current at lower temperature and in lower forward bias regions may arise from interband tunneling effects assisted by the thermal,activation within local defect states in depletion layer.

关 键 词：异质面 隧穿效应 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]