智能CMOS集成温度传感器设计  

Intelligent CMOS Integrated Temperature Sensor Designation

作　　者：曾健平[1] 文剑[1] 晏敏[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《仪表技术与传感器》2005年第3期34-35,62,共3页Instrument Technique and Sensor

摘　　要：基于标准0 18μmCMOS工艺和低功耗设计方法设计了集成温度传感器所需的3个重要电流产生电路,即与温度成正比的电流,与温度成反比的电流和稳定的、不随温度及电源电压变化的电流产生电路。采用低功耗设计方法解决了自然效应对温度传感器的影响。采用TSMC所提供的BSIM3V3模型进行仿真,电路在-40～120℃具有高线性度、高稳定度。同时电路具有低压、低功耗的优点,并且有良好的移植性,可使用于更多更广泛的吻合。It was based on the standard of 018 μm CMOS mixed-mode process and low power consumption design method to design three important circuits generating current which is the integrated temperature sensor needs.There are positive to absolute temperature(PTAT),negative to absolute temperature(NTAT),stable to temperature and power.Using low power consumption design method resolved the influence of self-heating effect to temperature sensor.The circuit was carried out using the TSMC offered BSIM3V3 model.It has high linearity,high stability when works between-40 to (120 ℃.)The circuit also has the property of low power and low power consumption.And it can be used in other circuits for more utilization.

关 键 词：CMOS 集成温度传感器 低功耗 自然效应 

分 类 号：TP212.9[自动化与计算机技术—检测技术与自动化装置]