纳米Zn_(1-x)Fe_xSe薄膜的制备和结构研究  

Fabrication and structure of nanometer Zn_(1-x)Fe_xSe films

作　　者：张林[1] 张连生[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《功能材料》2005年第3期357-358,361,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(59571016)

摘　　要：采用双源热蒸发方法制备了纳米 Zn1-xFexSe稀释磁性半导体薄膜,根据 X 射线衍射谱和Raman散射谱研究了薄膜的晶体结构和声子谱特征。结果表明:Zn1-xFexSe薄膜中纳米晶粒的晶格常数随Fe含量增加而增大;通过 Raman 散射光谱观察到明显的声子限域效应,与 ZnSe体材料相比,Zn1-xFexSe薄膜同光学声子模对应的 Raman 散射峰表现出宽化和红移;纳米晶粒的晶格膨胀导致 Raman散射峰红移随Fe含量增多而相应加大。Nanometer Zn1-xFexSe diluted magnetic semiconductor films are fabricated by the double-source deposition. The crystal structure and phonon spectrum feature of the films were studied by X-ray diffraction and Ra-man-scattered spectra. The results show that the lattice parameter of the nanocrystals in Zn1-xFexSe films increases linearly with Fe concentration. The phonon localized effect is observed obviously from the Raman-scattered spectrum. The Raman-scattered peak corresponding to the optical phonon mode for Zn1-xFexSe films displays the broadening and red-shifting with respect to the bulk ZnSe. The expansion of lattice for the nanocrystals results in that the red-shifting of Raman-scattered peak increases linearly with Fe concentration.

关 键 词：纳米晶薄膜 稀释磁性半导体 晶体结构 

分 类 号：TB383[一般工业技术—材料科学与工程]