射频磁控共溅射制备超亲水TiO_2/SiO_2复合薄膜  

Super-Hydrophilic TiO_2/SiO_2 Composite Thin Films Prepared by RF Magnetron Co-Sputtering

作　　者：沈杰[1] 沃松涛[1] 蔡臻炜[1] 崔晓莉[1] 杨锡良[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2004年第6期415-419,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：采用射频磁控共溅射法制备了SiO2 /TiO2 复合薄膜 ,通过控制SiO2 靶与TiO2 靶的溅射时间可调节SiO2 与TiO2 的比例。所制备的SiO2 /TiO2 薄膜为锐钛矿结构。实验结果表明 :SiO2 的掺入降低了SiO2 /TiO2 复合薄膜的光催化能力 ,但却提高了薄膜的亲水性的维持时间。其中 ,掺入 6 %～ 13%SiO2 的SiO2 /TiO2 复合薄膜 ,在紫外光照射 30min ,接触角降到 2° ;停止照射后 ,在 5天内接触角小于 6°。SiO 2/TiO 2 composite thin films were prepared by RF magnetron co-sputtering. The ratio of SiO 2 to TiO 2 can be adjusted by controlling the sputtering time ,respectively.All SiO 2/TiO 2 composite thin films have anatase phase.We found that addition of SiO 2 reduces the photocatalytic activity of SiO 2/TiO 2 co mposited thin films and improves its maintaining time of super-hydrophilicity.T he contact angle of the films with SiO 2 ratio of 6%～13% decreases to 2° duri ng a 30 min UV irradiation,and keeps lower than 6° for 5 days without UV irr adiation.

关 键 词：SIO2 共溅射法 TIO2薄膜 复合薄膜 接触角 内接 锐钛矿结构 射频 实验结果 照射 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.055[电子电信—物理电子学]