垂直Bridgman生长晶体界面的监测研究  

Study of monitoring crystal interface of vertical Bridgman growth

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作  者:张韶华[1] 黄为民[1] 

机构地区:[1]上海理工大学动力学院,上海200093

出  处:《广西工学院学报》2004年第4期5-7,12,共4页Journal of Guangxi University of Technology

基  金:国家自然科学基金资助项目(批准号:50276036).

摘  要:单晶半导体材料的垂直生长都使用了Bridgman法。在晶体生长过程中对固液界面的位置和形状进行监测虽十分重要却相当困难。该文探讨了根据许多半导体材料的电导率在固态与液态时相差很大这一特性来监测碲化镉晶体生长的涡电流技术的可行性,并在此基础上提出了一种新的描述晶体界面位置变化的冷态模拟方法,并经实验证实该方法可成功地描述晶体界面的位置及形状的变化。The Bridgman method was used in the vertical growth of single crystal semiconducting materials. It was very important but quite difficult to monitor the position and shape of the solid-liquid interface during the growth process of crystals.The paper discussed the feasibility of eddy current technology of monitoring CdTe crystal growth according to the characteristics that there was a great difference in the rate of conducting electricity of semiconducting materials when they are in solid state and in liquid state.Based on the above discussion,the paper put forword a cold simulation method of describing changes of crystal interface,and the experiments proved that the method could successfully describe the position of the crystal interface and its changes of the form.

关 键 词:晶体生长 BRIDGMAN法 界面 单晶 半导体材料 液态 固态 监测 时相 垂直 

分 类 号:O782[理学—晶体学]

 

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