水浴条件下YAG倍频、三倍频激光切割Si片比较  

Microcutting Si Wafer in Water Bath by the Second and Third Harmonic Output of YAG Laser

作　　者：凌磊[1] 楼祺洪[1] 李抒智[1] 叶震寰[1] 马海霞[1] 董景星[1] 

机构地区：[1]中国科学院上海光学与精密机械研究所,上海201800

出　　处：《光子学报》2005年第3期340-342,共3页Acta Photonica Sinica

基　　金：国家自然科学重点基金(10334110)资助项目

摘　　要：对Nd∶YAG固体激光器倍频、三倍频激光输出在空气和水浴环境下刻蚀Si片进行了研究,分析了刻蚀速率和样品表面形貌,得出了在355nm刻蚀波长下,水浴环境中,刻蚀速率最快,刻槽宽度最小,小于10μm的实验结论。It is reported that the slot of microcutting Si wafer by second and third harmonic output of YAG laser is narrower in water bath than in air environment. The surface morphology and etching rate for water bath and air environment are compared in detail. The cutting gap as small as 10 μm with edge fluctuation less than 5 μm is obtained in water bath by 355 nm laser. This technology may be helpful for industrial applications.

关 键 词：YAG固体倍频激光 切割 Si片 水浴 

分 类 号：TN249[电子电信—物理电子学]