一种低电压高精度CMOS基准电流源设计新技术  

A New Process Technology for Low Voltage Precision CMOS Current Reference

作　　者：胡学骏[1] 赵慧民[1] 

机构地区：[1]佛山科学技术学院机电与信息工程学院,广东佛山528000

出　　处：《电视技术》2005年第2期36-38,共3页Video Engineering

摘　　要：介绍一种新的在0.25μm混合模拟工艺电路中使用没有任何外围元件的基准电流源设计电路。该电路基于一个带隙电压基准源(BandgapReference,BGR)和一个类似β乘法器的CMOS电路。其中β乘法器中的电阻用NMOS晶体管代替以获得具有负温度系数的基准电流源;同时,BGR电压的正温度系数抵消了β乘法器中负温度系数。使用Bsim3v3模型实验的仿真结果说明-20℃到+100℃温度范围内基准电流源最大波动幅度小于1%,1.4～3V电压范围内片上所有电阻具有±30%的容差。A novel current reference with low temperature and supply sensitivity and without any external component has been developed in a 0.25 μm mixed-mode process. The circuit is based on a bandgap reference (BGR) voltage and a CMOS circuit similar to a β-multiplier. An NMOS transistor in triode region has been used in place of a resistor in conventional β-multiplier to achieve a current. The BGR voltage has a positive temperature coefficient to cancel the negative temperature coefficient of the β-multiplier. The simulation results using Bsim3v3 model show that the max-to-min fluctuation is less than 1% over a temperature range of -20°C to +100°C and a supply voltage range of 1.4 V to 1.3 V with 30% tolerance for all of the on-chip resistors.

关 键 词：基准电流源 带隙电压基准源 温度系数 CMOS电路 β乘法器 

分 类 号：TN386.1[电子电信—物理电子学]